| PART |
Description |
Maker |
| HY5S6B6D |
(HY5S6B6D/L/S/F/P) 4Banks x 1M x 16-Bits SDRAM
|
Hynix Semiconductor
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| HY57V561620 HY57V561620LT-H HY57V561620LT-HP HY57V |
4Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
| HY5Y7A2DLMP-HF HY5Y7A2DLM-HF |
4Banks x 4M x 32bits Synchronous DRAM
|
http://
Hynix Semiconductor
|
| T4312816B T4312816B-6SG T4312816B-7S T4312816B-7SG |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| HY5Y6B6DLF-HF HY5Y6B6DLF-PF HY5Y6B6DLFP-HF HY5Y6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS42VM16320D |
8M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM32400H |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| HY57V28820HLT-L |
(HY57V28820HC(L)T-L) 4Banks x 4M x 8bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS42RM16400K |
1M x 16Bits x 4Banks Mobile Synchronous DRAM
|
ISSI
|
